Project title: Controlled Synthesis of II-VI semiconductor
Nanostructures by Chemical Vapor Deposition
Wide and direct band gap semiconductors are fundamental to the development of
electronic and optical devices working in short wavelength range, i.e.,
light-emitting diodes and laser diodes in ultra-violet (UV) or visible light.
Over the past few years, semiconductor nanomaterials have
stimulated broad research interests because of their importance in both
fundamental research and future nano-electronic applications. The outstanding
potential materials are the wide-gap II-VI compounds (especially ZnS, ZnSe,
ZnTe and ZnO), which are inherently better luminescent materials than III-V materials.
This project aims at the deposition and characterization of novel II-VI
semiconductor nanostructures by using chemical vapor deposition (CVD) method.
ZnO and ZnS will be selected as model systems, and then extended to other
II-VI compounds. The emphasis will be given to the control of the morphology,
orientation, location and doping of the nanostructures. The corresponding
optical and electronic properties will be studied systematically. The
application potentials of different nanostructures will be explored.
Dr W J Zhang (firstname.lastname@example.org)
Prof S T Lee (email@example.com)
Suitable for: M.Phil./Ph. D