Project title: Controlled Synthesis of II-VI semiconductor Nanostructures by Chemical Vapor Deposition

Wide and direct band gap semiconductors are fundamental to the development of electronic and optical devices working in short wavelength range, i.e., light-emitting diodes and laser diodes in ultra-violet (UV) or visible light.  Over the past few years, semiconductor nanomaterials have stimulated broad research interests because of their importance in both fundamental research and future nano-electronic applications. The outstanding potential materials are the wide-gap II-VI compounds (especially ZnS, ZnSe, ZnTe and ZnO), which are inherently better luminescent materials than III-V materials.

This project aims at the deposition and characterization of novel II-VI semiconductor nanostructures by using chemical vapor deposition (CVD) method. ZnO and ZnS will be selected as model systems, and then extended to other II-VI compounds. The emphasis will be given to the control of the morphology, orientation, location and doping of the nanostructures. The corresponding optical and electronic properties will be studied systematically. The application potentials of different nanostructures will be explored.


Dr W J Zhang (apwjzh@cityu.edu.hk) and
Prof S T Lee (apannale@cityu.edu.hk)

Suitable for
: M.Phil./Ph. D