B8.

Project title: Transport Dynamics of Nano-networks

Recently there were spectacular progresses in the bottom up approach to nanodevice fabrication based on semiconductor nano-wires. Semiconductor nanowires with diameters as small as several nanometers can be fabricated in laboratories in large quantity. Nano-scale devices such as field effect transistors and p-n diodes can be built from these nano-wires. Integration of these nano-devices is possible by constructing a nano-wire cross-network. This will have significant impact on microelectronic technology. There are already some theoretical studies of the static characteristics of these nano-devices. It is therefore important to study the transport dynamics of nano-wire network so as to understand the operation speeds of nano-wire integrated circuits. In this project, a theoretical study of how fast charges can move in a nano-wire network will be carried out using classical and quantum transport theory. Results obtained will be very useful for the development of nano-wire integrated systems.

References:
X Daun, Y Huang, Y Cui, J Wang and C M Leiber, Nature 409 66 (2001).
M S Gudiksen, L J Lauhon, J Wang, D C Smith and C M Leiber, Nature 415 617 (2002).
D Whang, S Jin, Y Wu, and C M Leiber, Nano Letters, 3 1255 (2003).
Y Huang, X Duan, Y Cui, L J Lauhon, K-H Kim, C M. Lieber, Science 294 1313 (2001);
Y Huang, X Duan, Q Wei, and C M Lieber, Science 291 630 (2001).
A DeHon, P Lincoln, and J E Savage, IEEE Trans on Nanotechnology 2 165 (2003).

Supervisor: Prof K S Chan (apkschan@cityu.edu.hk)

Suitable for: M.Phil. or Ph.D.

Prerequisite: a Bachelor Degree in Physics or Electrical Engineering with strong Physics background; interest in semiconductor physics theory and many-body transport theory.