B7.

Project title: A theoretical study of semiconductor nano-wire and nano-devices

High quality semiconductor nanowires (some people call them nanowhiskers) with diameters as small as several nanometres can be fabricated in laboratories in large quantities. They have been used to build nanoscale devices such as field effect transistors, p-n junctions, and light-emitting diodes. With further advancement in the fabrication processes, integration of a large number of these nanodevices is possible and will have a significant impact on microelectronic technology. To achieve this aim, it is important to understand the physical properties of semiconductor nanowires and the relation between their properties and the characteristics of nano-device. In this project, a theoretical study of the optical and DC transport properties of semiconductor nanowire and devices will be carried out in order to understand several important issues in the development of this technology.

References:
X Daun, Y Huang, Y Cui, J Wang and C M Leiber, Nature 409 66 (2001).
M S Gudiksen, L J Lauhon, J Wang, D C Smith and C M Leiber, Nature 415 617 (2002).
D Whang, S Jin, Y Wu, and C M Leiber, Nano Letters, 3 1255 (2003).
Y Huang, X Duan, Y Cui, L J Lauhon, K-H Kim, C M. Lieber, Science 294 1313 (2001);
Y Huang, X Duan, Q Wei, and C M Lieber, Science 291 630 (2001).
A DeHon, P Lincoln, and J E Savage, IEEE Trans on Nanotechnology 2 165 (2003).

Supervisor: Prof K S Chan (apkschan@cityu.edu.hk)

Suitable for: M.Phil. or Ph.D.

Prerequisite: a Bachelor Degree in Physics or Electrical Engineering with strong Physics background; interest in semiconductor physics theory and many-body transport theory.