V.A.L. Roy’s paper is featured on cover of Small
V. A. L. Roy and co-workers present a novel hybrid architecture to achieve programmable transistor nodes that are analogous to flash memory. They incorporate a resistive switching random access memory as a switch gate for a transistor on a flexible substrate. The controlled, well-defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities for realizing fully functional nonvolatile memory for high-performance flexible electronics.